Every atom, precisely placed for your science
Your Research, Powered by Our Epitaxy. Stop troubleshooting deposition and start publishing results. We leverage 20 years of MBE expertise to grow your complex heterostructures atom by atom, exactly to spec.
Years of MBE expertise
Atomic-layer precision
Compound semiconductors
Your materials should be the foundation of your science, not the limit. We engineer the building blocks for topological states, quantum devices, and photonic systems so you can focus on the next breakthrough.
Decades of combined expertise in molecular beam epitaxy, quantum materials, and device physics — from lab bench to publication.
Our materials and processes draw directly from published work in leading physics journals.
Tailored epitaxial stacks for quantum transport, topological physics, superconductor-semiconductor hybrids, and optoelectronic devices
High-mobility 2DEG systems, quantum wells, and nanowire-compatible thin films. Ideal for topological and mesoscopic physics
Superconductor-semiconductor hybrid structures with pristine interfaces. Engineered for Majorana platforms, and gatemon qubits
Lattice-matched and strained heterostructures for HEMTs, photonics, and quantum dot systems with tunable bandgap engineering
A streamlined process designed to minimize your lead time and maximize material quality.
Tell us about your device structure, target properties, and application. We'll discuss feasibility and suggest optimizations.
Our MBE specialists design the full layer stack — substrate prep, buffer layers, active regions, and capping — optimized for your target.
Precision deposition in ultra-high vacuum. Real-time RHEED monitoring ensures crystalline perfection at every monolayer.
Structural and electronic characterization on every sample. Your wafer ships with growth logs and measurement data — ready for your lab.
Tell us about your project. Whether it's a single test wafer or a recurring growth campaign, we'll tailor a solution to your needs. Explore our materials to see what's possible.